Multiple Choice Questions in Power Electronics - 1
Important multiple choice questions from Power Electronics 1. Which one of the following statements is not correct? a) Power MOSFETs are so constructed as to avoid punch through. b) In a power MOSFET, the channel length is relatively large and channel width is relatively small c) Power MOSFETs do not experience any minority carrier storage d) Power MOSFETs can be put in parallel to handle large currents 2. Which one is most suitable power device for high frequency (>100 kHz) switching application? a) Power MOSFET b) BJT c) Schottky diode d) Microwave transistor 3. A thyristor equivalent of thyratron tube is a) SCR b) UJT c) Diac d) Triac 4. Turn-on of thyristor takes place when a) Anode to cathode voltages is positive b) Anode to cathode voltages is negative c) There is a positive current pulse at the gate d) The